Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices - ISBN:3540472347

Wide Bandgap Semiconductors: Fundamental Properties and Modern Photonic and Electronic Devices

Date: 13 April 2011, 17:31

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The p–n junction was invented in the first half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbability of synthesizing p-type wide bandgap semiconductors cast a long shadow over hopes for devices emitting in the elusive blue part of the electromagnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their efforts on nitrides, Professor Isamu Akasaki of Nagoya University at this time remained committed to his belief that “synthesis of high quality GaN crystals would eventually enable p-type doping” and in 1989 he succeeded in fabricating the world’s first GaN p–n junction light emitting diode.

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