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Terrestrial Neutron-induced Soft Errors in Advanced Memory Devices
Terrestrial Neutron-induced Soft Errors in Advanced Memory Devices
Date: 24 April 2011, 00:13

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Terrestrial neutron-induced soft-error (NISE) in semiconductor memory devices is currently one of the major concerns in issues of reliability. Understanding its mechanism and quantification of soft-error rates under environmental radiation on the ground are primarily crucial in the semiconductor technologies. Basic knowledge of NISE is required for scientists and engineers in the many relevant industrial and academic fields that are pertinent to the design and quality assurance of semiconductor devices, components, and systems. It should be noted that those devices, components and systems comprise the key technologies that are prevalent in modern IT societies.

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