Semiconductors and Semimetals, Volume 39 Minority Carriers in III-V Semiconductors Physics and Applications
| Date: 04 May 2011, 07:17
|
Semiconductors and Semimetals, Volume 39 Minority Carriers in III-V Semiconductors Physics and Applications
By Richard K. Ahrenkiel
* Publisher: Academic Press
* Number Of Pages: 409
* Publication Date: 1993-06
* ISBN-10 / ASIN: 0127521399
* ISBN-13 / EAN: 9780127521398
Contents
LIST ... OF CONTRIBUTO.R.S . . . . . . . . . . . . . . . . . . viii
PREFACE. . . . . . . . . . . . . . . . . . . . . . . . . . ix
Chapter 1 Radiative Transitions in GaAs and Other 111-V
Compounds
Niloy K . Dutta
I .
I1 .
111 .
IV .
V .
VI .
VII .
VIII .
1
3
5
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Band Structure in Semiconductors . . . . . . . . . . . . . . . . . .
Absorption and Emission Rates . . . . . . . . . . . . . . . . . . .
Optical Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
InGaAsP Materials . . . . . . . . . . . . . . . . . . . . . . . . . 18
Radiative Lifetime . . . . . . . . . . . . . . . . . . . . . . . . . 22
Quantum-Well Structures . . . . . . . . . . . . . . . . . . . . . . 24
Application to Lasers . . . . . . . . . . . . . . . . . . . . . . . . 32
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Chapter 2 Minority-Carrier Lifetime in 111-V Semiconductors
Richard K . Ahrenkiel
I .
I1 .
111 .
IV .
V .
VI .
VII .
VIII .
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Recombination Mechanisms . . . . . . . . . . . . . . . . . . . . . 42
Lifetime Measurement Techniques . . . . . . . . . . . . . . . . . . 65
Time-Resolved Photoluminescence in Device Structures . . . . . . . . 71
High-Injection Effects in Double Heterostructures . . . . . . . . . . . 108
GaAs Minority-Carrier Lifetime . . . . . . . . . . . . . . . . . . . 119
AI.Ga.+. As Lifetimes . . . . . . . . . . . . . . . . . . . . . . . 141
Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . 144
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Chapter 3 High Field Minority Electron Transport in p-GaAs
Tomofumi Furuta
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
I1 . Drift Velocity . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
CONTENTS
I11 . Energy Transfer Process . . . . . . . . . . . . . . . . . . . . . . .
IV . Ultrafast Energy Relaxation Process . . . . . . . . . . . . . . . . .
V . Monte Carlo Simulation Results . . . . . . . . . . . . . . . . . . .
VI . Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acknowledgment . . . . . . . . . . . . . . . . . . . . . . . . . .
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chapter 4 Minority-Carrier Transport in 111-V Semiconductors
Mark S . Lundstrom
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I1 . Minority-Carrier Transport in Compositionally Nonuniform
Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . .
111 . Heavy Doping Effects and Minority-CarrierTransport . . . . . . . . .
IV . Coupled Photon/Minority-Carrier Transport . . . . . . . . . . . . . .
V . Effects of Heavy Doping on Device-Related Materials Parameters . . . .
VI . Minority-Carrier Transport in 111-V Devices . . . . . . . . . . . . . .
VII . Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acknowledgment . . . . . . . . . . . . . . . . . . . . . . .
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chapter 5 Effects of Heavy Doping and High Excitation on the
Band Structure of Gallium Arsenide
Richard A . Abram
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I1 . Many-Body Effects in Bulk GaAs . . . . . . . . . . . . . . . . . .
Many-Body Effects in GaAs Quantum Wells . . . . . . . . . . . . . .
Effects of the Impurity Centres . . . . . . . . . . . . . . . . . . . .
V . Optical Experiments . . . . . . . . . . . . . . . . . . . . . . . .
VI Electrical Experiments . . . . . . . . . . . . . . . . . . . . . . .
Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . .
111 .
IV .
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chapter 6 An Introduction to Nonequilibrium Many-Body
Analyses of Optical and Electronic Processes in
111-V Semiconductors
David Yevick and Witold Bardyszewski
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I1 . k . p Band Structure . . . . . . . . . . . . . . . . . . . . . . .
I11 . Second Quantization . . . . . . . . . . . . . . . . . . . . . . .
CONTENTS vii
IV . Ensemble Properties . . . . . . . . . . . . . . . . . . . . . . . .
V . Electron Self-Energy . . . . . . . . . . . . . . . . . . . . . . . .
VI . Dielectric Function Models . . . . . . . . . . . . . . . . . . . . .
VII . Intraband Processes and Transport . . . . . . . . . . . . . . . . . .
VIII . Interband Processes . . . . . . . . . . . . . . . . . . . . . . . . .
IX . Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . .
APPENDIX A . . . . . . . . . . . . . . . . . . . . . . . . . . .
APPENDIX B . . . . . . . . . . . . . . . . . . . . . . . . . . .
APPENDIX C . . . . . . . . . . . . . . . . . . . . . . . . . . .
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
INDEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CONTENTOSF VOLUMEISN THISS ERIES. . . . . . . . . . . . . . . . . . . .
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