Radiation defect engineering - ISBN:9812565213

Radiation defect engineering

Date: 14 April 2011, 00:06

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The continuous increase in the complexity of problems of semiconductor electronics, as well as the development of new directions such as microwave electronics and optoelectronics have shown insufficient potential of the currently used technological processes of doping and have predetermined the inevitable search and development of new methods. One of the most promising techniques is radiation doping, i.e. the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. It is known that neutral particles, such as neutrons and y quanta, find wide application to provides the uniform doping of semiconductor wafers and ingots. One of the most widely used method is the uniform doping of silicon with phosphorus by irradiation with slow neutrons (neutron-transmutation doping).

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