Modeling and Characterization of RF and Microwave Power FETs - ISBN:0521870666

Modeling and Characterization of RF and Microwave Power FETs

Date: 06 May 2011, 18:29

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Product Description
This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Pla is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
Book Description
This is the first book devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. Contains real-world examples. Suitable for professionals and new graduates in the power amplifier design and modeling community.
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Product Details
* Hardcover: 388 pages
* Publisher: Cambridge University Press (June 25, 2007)
* Language: English
* ISBN-10: 0521870666
* ISBN-13: 978-0521870665

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