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Matching Properties of Deep Sub-Micron MOS Transistors
Matching Properties of Deep Sub-Micron MOS Transistors
Date: 14 April 2011, 15:29

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Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits.

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